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SGTMOS

Oriental Semiconductor’s SFGMOS Series MOSFET adopts Semi-Floating Gate structure, which combines the advantages of traditional planar structure and SGT structure of power MOSFET, and has the advantages of higher process stability and reliability, faster switching speed, smaller gate charge and higher application efficiency. SFGMOS Series MOSFET products cover the whole series of 20V~200V, which can be widely used in motor driver, synchronous rectification, etc.

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Package   P/N   Cfg. VDS (V) VGS (V) ID (A) Vth_typ(V) Ron (Ω)
Tc=25℃ 10V 4.5V
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